LED light mechanism and how the working principle

Sourc:The SiteAddtime:2017/10/28 Click:0
The light-emitting diode is made of a group III-IV compound, such as GaAs
(Gallium arsenide), GaP (gallium phosphide), GaAsP (phosphorus arsenide) and other semiconductors made of its core is the PN junction.Therefore, it has the general PN junction IN characteristics, that is, positive conduction, reverse cut , Breakdown characteristics
In addition, under certain conditions,
It also has a light-emitting characteristic. At forward voltage, electrons are made
N region into the P zone, the hole from the P
Area into the N zone. A minority carrier (minority) into the other region is recombined with the majority carrier (multiple sub) to emit light.